MoTe2 Thin Film on SiO2/Si Substrate

MoTe2 Thin Film on SiO2/Si Substrate

Catalog Number: ACM12058207-6

CAS Number: 12058-20-7

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Description

Description MoTe2 film is produced with the chemical vapor deposition (CVD) method, depositing monolayer or multilayer films on various substrates, such as SiO2/Si. We also supply customized MoTe2 products based on customers' requirements or design. Contact us and tell us your requirements.

Features And Benefits

Features And Benefits High purity and excellent electrochemical properties

Application

Application The thin films are particularly suitable for thin film geometry measurements such as catalysis, photovoltaics, electron transport, etc.

Specifications

Purity	99.9999% (6N)
Appearance	colorless and transparent
Characterization Methods	Raman, photoluminescence, TEM, EDS
Crystal Structure And Type	Hexagonal
Dimension	10 * 10mm, 15 * 15mm, 20 * 20mm, 2" disc, 4" disc or custom size specified by the customer.
Layers	single-layer, double-layer and multi-layer
Packaging	Purification vacuum packaging, 1 piece / box, 5 pieces / box. 10 pieces / box.
Production Method	chemical vapor deposition (CVD)
Storage Conditions	Room temperature and dry
Substrate	SiO2/Si Substrate
Type	Synthetic

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Please kindly note that our products are for research use only.