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2D Materials Optoelectronics Research

2D Materials Optoelectronics Research


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2D Materials Optoelectronics Research

Two-dimensional (2D) materials have unique features that set them apart from traditional bulk materials, and they have sparked a lot of research interest. 2D materials display a wide range of physical characteristics due to their various electronic structures, ranging from big-band insulators to narrow band gap semiconductors, topological insulators, semimetals, and metals. The physical characteristics of most 2D materials are electrically adjustable, making them ideal for functionalized optoelectronic information devices.

Alfa Chemistry offers customers in a variety of sectors optoelectronic 2D materials research services, with the goal of studying the optical and electrical properties of 2D materials in order to build on them to construct optoelectronic devices with unique features.

Why Us

Alfa Chemistry is committed to researching the optical and electrical characteristics of 2D materials in order to develop cutting-edge optoelectronic devices. Graphene, transition metal sulfide monomolecular layers, and mercury telluride quantum wells are among the 2D systems studied at our photonics lab. Far-infrared and terahertz emitters, as well as ultra-sensitive detectors, are two of the most common uses for such materials.

To address the most complicated challenges, our research team includes both practical and theoretical specialists. Our lab interacts with some of the world's top 2D system physics research centers and has access to cutting-edge optical, electrical, and measuring apparatus and manufacturing equipment.

2D Materials Optoelectronics Research

2D Materials with Optoelectronic Properties

Numerous 2D materials have been produced to date, and many surprising optical features.


Graphene can interact with light from the ultraviolet to the far-infrared, and even in the terahertz and microwave ranges, according to its unique linear energy-momentum dispersion relationship. It also has a lot of light-material interactions. Electrical gating and chemical doping can change the Fermi energy level of graphene.

Transition Metal Disulfides

TMDs have a band gap that spans the energy range of 1 to 2.5 eV, which corresponds to the spectral range of near-infrared to visible light. The indirect to direct band gap transition, which happens when the material thickness is lowered from many layers to a single layer, is one of the most essential features of TMDs. TMDs also have extremely strong light-material interactions, with monolayers of TMDs absorbing up to 20% of the light at particular resonance energy.

Black Phosphorus

The in-plane conductivity and photoconductivity of black phosphorus are anisotropic due to the folded structure, which leads to a significant degree of anisotropy in the light absorption and photoluminescence of black phosphorus.


MXene is a transparent conductive substance that has a lot of potentials. MXene has recently been shown to have an outstanding broadband nonlinear optical response. MXene's application boundaries in chemistry and biology might be expanded with easier surface decorating.

Van der Waals Heterostructures

Through van der Waals heterostructures, the free mixing of diverse materials may lead to more exciting discoveries of novel electrical and optical capabilities. Van der Waals heterostructures now disclose remarkable features and novel phenomena that have enormous potential in functioning optoelectronic devices, although they are still in the research stage.

Characterizations of types of 2D materials.Fig 1. Characterizations of types of 2D materials. a) Electronic band structure of graphene. b) Light absorption of graphene monolayer. c) The band structure of bulk and monolayer MoS2. d) Absorption spectra of MoS2 thin films. e) The evolution of bandgap calculated by different methods and optical absorption peak according to the stacking layer number of few-layer phosphorene. f) Optical absorption spectra of few-layer BP for light incident. (Tan T, et al. 2020)

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  1. Tan T, et al. (2020). "2D Material Optoelectronics for Information Functional Device Applications: Status and Challenges." Advance Science. 7(11): 2000058.

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