Inductively coupled plasma chemical vapor deposition (ICPCVD) is a specialized thin-film deposition technique. In ICPCVD, plasma is generated using high-frequency RF power to excite and ionize gases, creating reactive species that facilitate the deposition of thin films. These films can be constructed from a wide variety of materials, including silicon dioxide (SiO2), silicon nitride (SiNx), and amorphous silicon (α-Si). Unlike traditional chemical vapor deposition (CVD), ICPCVD offers significant advantages in terms of deposition rate, film quality, and uniformity, making it suitable for a range of advanced material synthesis tasks.
Applications
The ICPCVD equipment is used in the deposition of SiO2, SiNx, α-Si and SiON insulating films.
Technical Specifications
- Sample Size: The system supports substrates up to 8 inches in diameter.
- Temperature Control:
Table Temperature Control: Heating up to 400°C.
Chiller Temperature Control: Heating up to 80°C. - RF Power: With a maximum RF power output of 3000W.
- Process Gases: The system supports a variety of process gases including SiH4 (Silane), N2O (Nitrous Oxide), NH3 (Ammonia), and Ar (Argon).
- Uniformity: The system is capable of achieving film thickness uniformity of ≤±5%.
- Clean Gases: SF6 and O2 are employed for cleaning the system.
Alfa Chemistry's ICPCVD technology platform is designed to meet the most demanding requirements for thin-film deposition. Whether you are developing advanced semiconductor devices, high-efficiency solar cells, or durable protective coatings, our platform offers the flexibility, precision, and performance you need for cutting-edge material fabrication. For more services, please feel free to contact us.
Please kindly note that our products are for research use only.
