Atomic layer deposition (ALD) is an advanced thin-film deposition technique that enables the precise growth of atomic layers of material on a substrate. The process involves alternating pulses of precursor gases that react with the substrate surface in a highly controlled manner, resulting in the deposition of a monolayer with each pulse. The key feature of ALD is its self-limiting nature, where the reaction of the precursors is halted as soon as the surface is fully saturated, ensuring highly uniform, conformal, and precise film growth.
Applications
ALD System 02 is used to deposit nitride films (AlN, TiN, TaN, SiN) and metal thin films for applications in semiconductors and electronics. It supports the growth of dielectric, conductive, passivation, and other functional films for enhanced device performance and protection.
Technical Specifications
- Sample Size: Standard substrates: 8" wafers and smaller.
- Temperature Range: Conventional temperature range 150°C to 450°C, low-temperature range<150°C, high-temperature range 450°C to 650°C.
- Source Configuration: Aluminum (TMA), titanium (TiCl4), tantalum (Ta(OEt)5), silicon (HCDS).
- Gas Flow Configuration: PN2 (Nitrogen), O2 (Oxygen), NH3 (Ammonia), H2 (Hydrogen), Ar (Argon).
- Film Uniformity: The system guarantees a film uniformity of ≤5%.
Our atomic layer deposition (ALD) system 02 (nitride thin films) platform offers cutting-edge technology for the precise deposition of nitride thin films such as AlN, TiN, TaN, and SiN. With advanced temperature control, customizable precursor configurations, and excellent film uniformity, our ALD System 02 is a versatile platform for advanced thin-film deposition across industries, such as in semiconductor manufacturing, MEMS, optoelectronics, and energy storage. For more services, please feel free to contact us.
Please kindly note that our products are for research use only.
