CVD GaSe Thin Film

CVD GaSe Thin Film

Catalog Number: ACM12024112-5

CAS Number: 12024-11-2

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Description

Description Bulk GaSe is a direct semiconductor with exciting second-harmonic, optical, and photovoltaic applications. It crystallizes in a hexagonal structure.

Features And Benefits

Features And Benefits Instead of reaching full continuity, this sample can find many isolated GaSe triangles ranging in thickness from 1L to 100s layers. By default, it grows on SiO2/Si or (100) GaAs substrates.

Application

Application Exciting second harmonic, optical, and photovoltaics applications

Specifications

Purity	99.9999% (6N)
Appearance	brown
Bandgap	2.0 eV
Characteristics	PL, Raman and semiconducting responses. GaSe films have guaranteed PL, R
Characterization Methods	Raman, photoluminescence, TEM, EDS
Coverage	Isolated triangles
Crystal Structure And Type	Hexagonal phase
Dimension	1cm x 1cm might have uneven sample shape
Electrical Property	Direct gap semiconductor (bulk) indirect gap semiconductor (monolayer)
Packaging	1 piece/pack
Production Method	Chemical vapor deposition
Substrate	SiO2/Si or GaAs
Type	Synthetic
Unit Cell Parameters	a=b=0.376 nm, c=1.596 nm, α=β=90°, γ=120°

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