CVD Multilayer hBN

CVD Multilayer hBN

Catalog Number: ACM10043115-22

CAS Number: 10043-11-5

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Description

Description Alfa Chemistry grew h-BN (boron nitride) monolayer thick films on 50 um thick copper foil. Our h-BN CVD process has been employed to keep the defect density low and increase the single domain size to reduce the 1D grain boundary defect concentration.

Features And Benefits

Features And Benefits h-BN is an insulator with a direct band gap of 6 eV and strong ionic bonds between BN atoms.

Application

Application Optoelectronic devices, microelectronic devices, biological sensing, chemical sensing and other fields.

Specifications

Purity	99.9999% (6N)
Density	defect density ~1E10 - 1E11 cm-2
Appearance	colorless and transparent
Bandgap	6 eV
Characterization Methods	Raman, photoluminescence, TEM, EDS
Crystal Structure And Type	Hexagonal
Dimension	5cm x 5cm
Layers	single layer
Packaging	1 piece/pack
Production Method	chemical vapor deposition (CVD)
Storage Conditions	Room temperature and dry
Substrate	copper foils
Thickness	Substrate 50 um
Type	Synthetic

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Alfa Chemistry provides cost effective, high quality and hassle free services to our clients worldwide. We guarantee on-time delivery of our results.

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Please kindly note that our products are for research use only.