CVD MoSe2 Continuous Film

CVD MoSe2 Continuous Film

Catalog Number: ACM12058183-10

CAS Number: 12058-18-3

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Description

Description This MoSe2 film is formed by the continued growth of isolated grains together to form a continuous film with multiple layers on top.
MoSe2 has many optional substrates, among which SiO2/Si substrates are directly deposited products. Other substrates such as silicon wafers, PET, PI, ITO, FTO, glass, metal substrates, etc. are transferred to the customer's required substrate by growing on SiO2/Si.

Features And Benefits

Features And Benefits High purity and excellent electrochemical properties

Application

Application Optoelectronic devices, microelectronic devices, biological sensing, chemical sensing and other fields.

Specifications

Purity	99.9999% (6N)
Appearance	colorless and transparent
Characterization Methods	Raman, photoluminescence, TEM, EDS
Crystal Structure And Type	Hexagonal
Dimension	10*10mm, 15*15mm, 20*20mm, 2 inch disc, 4 inch disc or customized size specified by the customer.
Layers	single layer, multiple layers
Packaging	Purified vacuum packaging, 1 piece/box, 5 pieces/box. 10 pieces/box.
Production Method	Chemical Vapor Deposition (CVD)
Storage Conditions	Room temperature and dry
Substrate	TEM copper mesh, GaAs gallium arsenide, copper film, silver film, gold film, ITO, glass, SrTiO3 strontium titanate, mica, PDMS, SOI, high resistance intrinsic silicon (>10000ohm.cm) special for terahertz, silicon wafer , Flexible PET, Optical Quartz, Sapphire (Single/Double Polished), SiO2/Si
Thickness	Substrate 300nm oxide layer/other thickness (SiO2/Si)
Type	Synthetic

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