Plasma-enhanced chemical vapor deposition (PECVD) is a sophisticated thin-film deposition technique. PECVD utilizes a plasma field created by introducing an RF (Radio Frequency) power source, which excites gas molecules into ionized states. These reactive ions, radicals, and neutral species facilitate chemical reactions that result in the deposition of thin films onto the substrate. It enables the deposition of high-quality films on substrates at lower temperatures compared to conventional chemical vapor deposition (CVD).
Applications
The PECVD equipment is used in the deposition of SiO2 and SiNx insulating films.
Technical Specifications
- Sample Size: The equipment is compatible with wafer sizes up to 8 inches (8" or 200 mm) and below.
- Temperature: The system operates at a maximum temperature of 350°C.
- RF Power: The RF power applied is 600W at 13.56 MHz.
- Gas Types: The gases used in the process include SiH4 (Silane), N2O (Nitrous Oxide), NH3 (Ammonia), N2 (Nitrogen), CF4 (Carbon Tetrafluoride), O2 (Oxygen)
- SiNx Stress: The stress in SiNx films can range from -200 MPa to 200 MPa.
- Refractive Index: SiO2 1.45–1.5, SiNx 1.9–2.1.
- Uniformity: The film uniformity is specified to be ≤ ±5%.
- Processing Capacity:
2-inch wafers: 16 pieces per furnace.
3-inch wafers: 4 pieces per furnace.
4-inch wafers: 4 pieces per furnace.
6-inch wafers: 1 piece per furnace.
8-inch wafers: 1 piece per furnace.
With precise control over key film properties such as refractive index, stress, and uniformity, our platform delivers tailored solutions that enhance device performance and reliability. Whether you're working with semiconductor devices, solar cells, or optical coatings, our PECVD technology guarantees exceptional film quality, uniformity, and efficiency, supporting both research and large-scale production.
Trust our PECVD systems to provide the versatility, precision, and performance you need for your most demanding applications.
Please kindly note that our products are for research use only.
