ALD GaSe Thin Film

ALD GaSe Thin Film

Catalog Number: ACM12024112-4

CAS Number: 12024-11-2

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Description

Description We synthesized multilayer gallium selenide (GaSe) films by atomic layer deposition (ALD) growth to achieve large monodomain films with a negligible number of grain boundaries.

Features And Benefits

Features And Benefits GaSe films are deposited directly on double-sided polished-cut sapphire substrates, but can be transferred to virtually any substrate choice. GaSe films have guaranteed PL, Raman and semiconducting responses.

Application

Application GaSe thin films with a thickness of 100 nanometers are particularly suitable for thin film geometry measurements such as catalysis, photovoltaics, electron transport, etc.

Specifications

Purity	Better than 99.9999% (6N)
Appearance	brown
Bandgap	2.0 eV
Characteristics	PL, Raman and semiconducting responses. GaSe films have guaranteed PL, R
Characterization Methods	Raman, photoluminescence, TEM, EDS
Crystal Structure And Type	Hexagonal phase
Dimension	1cm2 size substrate and 0.5 mm2 active Gas area
Electrical Property	Direc semiconductor
Layers	multilayer
Packaging	1 piece/pack
Production Method	atomic layer deposition (ALD) technology
Storage Conditions	Room temperature and dry
Substrate	Sapphire Substrate, PET Substrate, Quartz Substrate, SiO2/Si Substrate
Thickness	Layer 100nm
Type	Synthetic
Unit Cell Parameters	a=b=0.376 nm, c=1.596 nm, α=β=90°, γ=120°

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