Atomic layer deposition (ALD) is a thin-film deposition technique that enables the growth of high-quality, uniform films with atomic precision. ALD operates by alternately introducing gaseous precursors to the substrate in a controlled manner, creating a self-limiting reaction that allows for layer-by-layer deposition. This process ensures the accurate control of film thickness, uniformity, and composition, making it a crucial technology for a wide range of applications in the semiconductor, optics, and electronics industries.
Applications
The ALD System 01 for oxide thin films is specifically designed to deposit a variety of oxide films, such as aluminum oxide (Al2O3), zinc oxide (ZnO), hafnium oxide (HfO2), zirconium oxide (ZrO2), and silicon dioxide (SiO2). These materials exhibit properties like high dielectric constants, optical transparency, and chemical stability, making them indispensable in the fabrication of advanced electronic and photonic devices.
Technical Specifications
- Sample Size: Standard substrates: 8" wafers and smaller.
- Temperature Range: Conventional temperature range 150°C to 380°C, low-temperature range <150°C, high-temperature range 380°C to 450°C.
- Source Configuration: Aluminum, zinc, oxygen, hafnium, zirconium, silicon.
- Gas Flow Configuration: PN2 (Nitrogen), O2 (Oxygen), NH3 (Ammonia), H2 (Hydrogen), Ar (Argon).
- Film Uniformity: The system guarantees a film uniformity of ≤2%.
Alfa Chemistry's atomic layer deposition (ALD) system 01 for oxide thin films offers an advanced, precise, and versatile solution for the deposition of high-quality oxide films in a wide range of industries. With its state-of-the-art technology, customizable deposition parameters, and high film uniformity, the platform meets the rigorous demands of semiconductor manufacturing, energy storage, optics, and beyond. For more services, please feel free to contact us.
Please kindly note that our products are for research use only.
