n-type WSe2 Crystal

Description

Description We obtained flawless n-type WSe2 crystals by Au or Re doping: they are simply regarded as the gold standard in the field of 2D materials. Our n-type WSe2 crystals are doped with Re or Au atoms in the ~1E17-1E18 cm-3 range. If your research requires other types or concentrations of dopants, please contact us.

Features And Benefits

Features And Benefits Doped WSe2 crystals are known for their excellent valley electronic properties, perfect crystallization, defect-free structure, extremely narrow PL bandwidth, clean PL spectrum (unbound exciton shoulder), and high carrier mobility.

Application

Application Thousands of scientific articles cite us and use these crystals for scientific accuracy and clear signals.

Specifications

Purity	(6N) 99.9999% confirmed
Bandgap	1.56 eV emission
Characteristics	superior valleytronic performance perfect crystallization defect free structure, extremely narrow PL bandwidths clean PL spectra (free of bound exciton shoulders) high carrier mobility.
Characterization Methods	XRD, XPS, AES, SIM, and HRTEM
Classification	Transition metal trichalcogenides (TMTCs), 3D Topological insulator materials, Nano-electronics, Nano-photonics, Photovoltaic, Materials science
Crystal Structure And Type	Hexagonal
Dimension	~ 3-5 cm
Dopant	n-type (Re or Au dopant)
Electrical Property	direct bandgap semiconductor
Production Method	{Defaut} Flux zone (no halide contamination) defect free {Optional CVT} Contains Br2, Cl2, TeCl4, and other halides
Type	Synthetic
Unit Cell Parameters	a = b = 0.331 nm, c = 1.298 nm ; α=β=90° γ=120°