n-type WS2 Crystal

n-type WS2 Crystal

Catalog Number: ACM12138099-1

CAS Number: 12138-09-9

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Description

Description We grow flawless WS2 crystals by chemical vapor transport (CVT) and flux growth: our n-type WS2 crystals are doped with Re or Au atoms in the ~1E17-1E18 cm-3 range.

Features And Benefits

Features And Benefits WS2 crystals are known for their excellent valley electronic properties, perfect crystallization, defect-free structure, extremely narrow PL bandwidth, clean PL spectrum (unbound exciton shoulder), and high carrier mobility.
Note that doping into TMDC greatly reduces the crystallization time (growth rate), so electron-doped TMDCs measure smaller values than undoped (intrinsic) TMDCs.

Application

Application Thousands of scientific articles cite us and use these crystals for scientific accuracy and clear signals.

Specifications

Molecular Weight	247.97 g/mol
Melting Point	1250 °C (lit.)
Purity	6N (99.9999%)
Appearance	Black
Bandgap	2.02 eV
Characteristics	superior valleytronic performance perfect crystallization defect free structure, extremely narrow PL bandwidths clean PL spectra (free of bound exciton shoulders) high carrier mobility.
Characterization Methods	superior valleytronic performance perfect crystallization defect free structure, extremely narrow PL bandwidths clean PL spectra (free of bound exciton shoulders) high carrier mobility.
Classification	Transition metal dichalcogenides (TMDCs), 3D semiconductor Materials, Nano-electronics, Nano-photonics, Electrochemical energy storage system, Materials science
Crystal Structure And Type	Hexagonal
Dimension	~ 3-5 cm
Dopant	n-type (Re or Au dopant)
Electrical Property	direct bandgap semiconductor
Production Method	{Defaut} Flux zone (no halide contamination) defect free {Optional CVT} Contains Br2, Cl2, TeCl4, and other halides
Type	Synthetic
Unit Cell Parameters	a = b = 0.317 nm, c = 1.230 nm, α = β = 90°, γ = 120°

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