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n-type MoSe2 Crystal

n-type MoSe2 Crystal

Catalog Number: ACM12058183-4

CAS Number: 12058-18-3

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Description

Description We obtained perfect n-type MoSe2 crystals by Au or Re doping: they are simply regarded as the gold standard in the field of 2D materials. Our n-type MoSe2 crystals are doped with Re or Au atoms in the ~1E17-1E18 cm-3 range. However, if your research requires other types or concentrations of dopants, please contact us.

Features And Benefits

Features And Benefits Doped MoSe2 crystals are known for their excellent valley electronic properties, perfect crystallization, defect-free structure, extremely narrow PL bandwidth, clean PL spectrum (unbound exciton shoulder), and high carrier mobility.

Application

Application Thousands of scientific articles cite us and use these crystals for scientific accuracy and clear signals.

Specifications

Molecular Weight 253.86 g/mol
Purity 6N (99.9999%)
Bandgap 1.41 - 1.58 eV
Characteristics superior valleytronic performance
perfect crystallization
defect free structure,
extremely narrow PL bandwidths
clean PL spectra (free of bound exciton shoulders)
high carrier mobility.
Characterization Methods XRD, XPS, AES, SIM, and HRTEM
Classification Transition metal dichalcogenides (TMDCs), 2D semiconductor Materials, Nano-electronics, Nano-photonics, Electrochemical energy storage system, Materials science
Crystal Structure And Type Hexagonal
Dimension ~ 3-4 cm
Dopant n-type (Re or Au dopant)
Electrical Property direct bandgap semiconductor
Production Method {Defaut} Flux zone (no halide contamination) defect free
{Optional CVT} Contains Br2, Cl2, TeCl4, and other halides
Type Synthetic
Unit Cell Parameters a = b = 0.330 nm, c = 1.292 nm, α = β = 90°, γ = 120°

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