Gallium Telluride(GaTe)

Gallium Telluride(GaTe)

Catalog Number: ACMA00022935

CAS Number:

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Description

Description Our single crystal monoclinic GaTe crystal products feature guaranteed anisotropic, electronic and optical grade crystal quality. We developed using three different growth techniques to optimize grain size and reduce defect concentration.

Features And Benefits

Features And Benefits Each crystal is very large in size and can be used for many years, with high crystallinity, oriented in the 0001 direction, and easy to peel off. Our R&D staff acquire feature datasets in each sample to ensure structural, optical and electronic consistency.

Specifications

Purity	Better than 99.9999% (6N)
Bandgap	1.65 eV
Characterization Methods	Raman, photoluminescence, TEM, EDS
Crystal Structure And Type	Monoclinic(anisotropic) phase
Dimension	≧1 cm
Electrical Property	Direc semiconductor (bulk)
Production Method	Bridgman growth, chemical vapor transport (CVT), and flux zone growth
Type	Synthetic
Unit Cell Parameters	a=0.416; b=0.934; c=1.086 nm; α=106.5°; β=90°; γ=102.8°

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Our Advantages

High Quality

Time-Effective

Hassle-Free

Time-Effective

Alfa Chemistry provides cost effective, high quality and hassle free services to our clients worldwide. We guarantee on-time delivery of our results.

If you have any questions at any time during this process, please contact us. We will do our best to meet your needs.

Please kindly note that our products are for research use only.