Germanium Selenide (GeSe)

Germanium Selenide (GeSe)

Catalog Number: ACM12065100-2

CAS Number: 12065-10-0

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Description

Description GeSe is a semiconductor with an indirect band gap of about 1.1 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Germanium selenide belongs to the group VI transition metal monochalcogenides.

Features And Benefits

Features And Benefits The GeSe crystals we produce have typical lateral dimensions of about 0.6-0.8 cm, are rectangular and have a metallic appearance.

Application

Application Germanium Selenide is a promising semiconductor for electronic and opto-electronic applications (such as photovoltaics, phototransistors, thermoelectrics, and energy storage devices.

Specifications

Synonyms	Germanium (II) selenide, Selanylidenegermanium
Molecular Weight	151.60 g/mol
Purity	>99.995 %
Appearance	Dark brown
Bandgap	1.07 eV
Characterization Methods	XRD, Raman, EDX
Classification	Transition metal monochalcogenides (TMMCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Photovoltaic, Materials science
Crystal Structure And Type	Orthorhombic C
Dimension	~10 mm
Electrical Property	Semiconductor
Production Method	Chemical Vapour Transport (CVT)
Type	Synthetic
Unit Cell Parameters	a = 0.383 nm, b = 0.440 nm, c = 1.078 nm, α = β = γ = 90°

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