Gallium Sulfide (GaS)(alpha phase)

Gallium Sulfide (GaS)(alpha phase)

Catalog Number: ACM12024101-2

CAS Number: 12024-10-1

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Description

Description GaS (alpha phase) is a semiconductor with an indirect bandgap of ~2.6 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. α-GaS belongs to the group-13 post-transition metal monochalcogenides.

Features And Benefits

Features And Benefits Typical lateral dimensions of the gallium sulfide crystals we produce are around 0.6-0.8 cm. The crystals are yellow and transparent.

Application

Application Hexagonal (2H phase) β-GaS is the energetically favorable crystal arrangement among the four GaS polytypes. Like all other layered 2D structures, adjacent GaS layers are bound by the weak van der Waals force along the c-axis. This makes it possible to peel the structure by mechanical or liquid exfoliation. The resultant ultra-thin few or single layer 2D gallium sulfide nanosheets or nanoparticles can be employed in innovative photoelectrochemical (PEC)-type UV-selective photodetectors for medical diagnostics, air purification, chemical analysis, and advanced optical communication system.

Specifications

Synonyms	Gallium (II) sulfide, Gallium (II) sulphide.
Molecular Weight	101.79 g/mol
Melting Point	965 °C (1769 °F)
Purity	>99.995 %
Appearance	Yellow
Bandgap	~ 2.59 eV (indirect)
Characterization Methods	XRD, Raman, EDX
Classification	Transition metal monochalcogenides (TMMCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Photovoltaic, Materials science
Crystal Structure And Type	Hexagonal
Dimension	~10 mm
Electrical Property	Semiconductor
Production Method	Chemical Vapour Transport (CVT)
Type	Synthetic
Unit Cell Parameters	a = 0.360, b = 0.640 nm, c = 1.544 nm, α = β = 90°, γ = 120°

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