GaInS3 Crystal

GaInS3 Crystal

Catalog Number: ACMA00022949

CAS Number:

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Description

Description GaInS3 is a layered vdW semiconductor. Its electronic, magnetic and optical properties from bulk to monolayer form remain largely unknown.

Features And Benefits

Features And Benefits Our GaInS3 crystals are synthesized using the flux zone growth technique with a purity of 5.8N and high single crystal quality. The resulting crystals are stable to the environment and can be used for exfoliation.

Specifications

Purity	99.9999% confirmed purity
Characteristics	Environmentally stable Single crystalline
Characterization Methods	XRD, XPS, AES, SIM, and HRTEM
Crystal Structure And Type	Orthorhombic layered phase
Degree Of Exfoliation	Easy to exfoliate
Dimension	Each order contains a number of ~5mm sized crystal
Electrical Property	2D semiconductor
Production Method	Flux growth technique
Type	Synthetic

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