1T phase Tantalum Disulfide (1T-TaS2)

1T phase Tantalum Disulfide (1T-TaS2)

Catalog Number: ACMA00022893

CAS Number:

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Description

Description 1T-TaS2 at ambient pressure shows metallic phase at high temperature (>550K), disproportionate CDW (ICCDW) phase below 550K, nearly commensurate CDW (NCCDW) phase below 350K, and commensurate CDW (CCDW) phases, including Mott phases, below ~180 K. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. 1T TaS2 belongs to the group V transition metal dichalcogenides (TMDC).

Features And Benefits

Features And Benefits The 1T phase TaS2 crystals we produce have typical lateral dimensions of about 0.6-0.8 cm, are hexagonal and have a metallic appearance.

Specifications

Purity	>99.995 %
Characterization Methods	XRD, Raman, EDX
Crystal Structure And Type	Hexagonal
Dimension	~8 mm
Electrical Property	Semiconductor, Charge density waves (CDW) system, Mott phase
Production Method	Flux zone (guaranteed no halide contamination) On request: Chemical vapor transport (CVT) contains Br2, Cl2, TeCl4, and other halides
Type	Synthetic
Unit Cell Parameters	a = b = 0.336 nm, c = 0.590 nm, α = β = 90°, γ = 120°

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