CAS 18855-94-2 Hafnium Disulfide (HfS2) Crystal - 2D Materials / Alfa Chemistry

Description

Description Hafnium disulfide (HfS2 ) is another layered 2D semiconductor material belonging to the group IV transition metal dichalcogenides (TMDC). Hafnium disulfide is a semiconductor with an indirect band gap of about 2.0 eV. The direct band gap of monolayer HfS is expected to be around 1.2 eV.

Features And Benefits

Features And Benefits HfS2 crystallizes in an octahedral metal coordination in the 1T polytype. 1T-HfS2 is essentially a semiconductor. Compared with most other 2D materials, ultrathin HfS2 shows higher, faster response and higher stability. However, the 1T-HfS2 monolayer system undergoes a semiconductor-to-metal transition when compressive strain is applied.

Application

Application Hafnium disulfide-based field-effect transistors (FETs) can have sheet current densities as high as 650 μA μm, which makes HfS2 an attractive candidate for logic and optoelectronic device applications. The exfoliated layers of HfS2 are also built into ultrasensitive phototransistors and high-performance FETs.
2D-HfS 2 can also be used as an efficient photocatalyst for water splitting, with strong absorption mainly in the visible and ultraviolet regions.

Specifications

Synonyms	Hafnium sulfide
Molecular Weight	242.62 g/mol
Purity	≥ 99.999%
Appearance	Dark brown
Bandgap	~ 2.0 eV (indirect); ~ 1.2 eV (direct)
Characterization Methods	XRD, Raman, EDX
Classification	Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Photovoltaic, Materials science
Crystal Structure And Type	Octahedral (1T)
Dimension	3~5 mm
Electrical Property	2D semiconductor
Production Method	Chemical Vapour Transport (CVT)
Type	Synthetic
Unit Cell Parameters	a = b = 0.363 nm, c = 0.586 nm, α = β = 90°, γ = 120°