2H Tin Disulfide (SnS2)

2H Tin Disulfide (SnS2)

Catalog Number: ACM1314950-3

CAS Number: 1314-95-0

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Description

Description 2H-SnS2 is a semiconductor with an indirect band gap of ~2.2 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. SnS2 belongs to the group-14 post-transition metal dichalcogenides.

Features And Benefits

Features And Benefits The 2H phase Tin Disulfide crystals produced have a lateral size of ~0.6-0.8 cm, are transparent and are yellow colored.

Application

Application In the form of single or few-layer thin films, exfoliated SnS nanosheets have various applications. These include light emitters, field effect transistors (FETs), gas sensors, photodetectors, thermoelectric and photovoltaic devices.

Specifications

Synonyms	Stannous sulfide,Tin monosulfide, Tin sulphide, Herzenbergite
Molecular Weight	150.78 g/mol
Purity	>99.995 %
Bandgap	1.07 -1.32 eV
Characterization Methods	XRD, Raman, EDX
Classification	Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Materials science
Crystal Structure And Type	Hexagonal
Dimension	~8 mm
Electrical Property	Semiconductor (~2.2eV)
Production Method	Chemical Vapour Transport (CVT)
Type	Synthetic
Unit Cell Parameters	a = b = 0.364, c = 0.589 nm, α = β = 90°, γ = 120°

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