GeBi2Te4 Crystal

GeBi2Te4 Crystal

Catalog Number: ACMA00024853

CAS Number:

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Description

Description GeBi2Te4 is a topological insulator material with exciting electronic and quantum properties. Our GiBi2Te4 single crystals were synthesized using the flux growth method without using any halide (I2, Br, Cl2) or magnetic (Fe, Ni, Co) impurities present in the crystal matrix.

Features And Benefits

Features And Benefits Material growth begins with the electrolytic purification of precursor materials (Bi, Ge, and Te) and a flux decantation process at high temperature. Our crystals guarantee environmental stability and electronic-grade quality, and the crystals are easily exfoliated into thinner pieces.

Application

Application Energy storage, catalysis, analytical chemistry, mechanics, adsorption, biology, microelectronics, sensors, etc

Specifications

Molecular Weight	1000.97076 g/mol
Purity	99.9999% (6N)
Density	7.228 g/cm3
Appearance	Silver to dark gray crystals
Characterization Methods	XRD, Raman, EDX, Hall measurement
Crystal Structure And Type	Trigonal, R3m
Dimension	6mm in size
Electrical Property	Topological insulator
Production Method	Flux zone technique 6N purity. Single crystal
Storage Conditions	Room temperature and dry
Type	Synthetic
Unit Cell Parameters	a=b=c=4.1335Å and α=β=γ=17.757°

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