CAS 12166-31-3 ZrS3 Nanosheets - 2D Materials / Alfa Chemistry

Description

Description ZrS3 nanosheets differ from our ZrS3 crystals in that ZrS3 nanosheets have been grown directly on Zr thin foils using a vapor-liquid-solid (VLS) growth technique. Highly crystalline ZrS3 nanoribbons are grown directly at high density perpendicular to the Zr foil surface.

Features And Benefits

Features And Benefits Zr/ZrS3 nanosheet stacks can be mechanically exfoliated to various substrates; VLS grown ZrS3 is already very thin. This mechanical exfoliation enables you to obtain monolayers more easily; ZrS3 is layered like MoS2 and other layered systems material, except that it exhibits a highly anisotropic crystal structure and material properties.
The crystals have a perfect 1:3 stoichiometric ratio and a defect density of less than 1 defect per 10,000 unit cells.

Application

Application It is ideal for high refresh (battery, gas sensing/storage) applications.

Specifications

Molecular Weight	187.42 g/mol
Melting Point	1020 °C (lit.)
Purity	≥ 99.999%
Characteristics	The presence of crystallographic anisotropy leads to orientation-dependent properties such as thermal conductivity, electron mobility, and exciton binding energies.
Characterization Methods	TEM, XPS, SIMS, Raman, and XRD,
Classification	Transition metal trichalcogenides (TMTCs), 2D semiconductor materials, nano-electronics, nano-photonics, photovoltaic, materials science
Electrical Property	Thermoelectric IR semiconductor, High carrier mobility semiconductor
Production Method	Vapor-liquid-solid (VLS) growth technique
Type	Synthetic