ZrGeTe4 Crystal

ZrGeTe4 Crystal

Catalog Number: ACMA00024757

CAS Number:

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Description

Description ZrGeTe4 crystal is a layered anisotropic semiconductor with a predicted band gap of 0.4 eV. Although it is layered and can be exfoliated into several and single layers, their properties remain largely unknown.

Features And Benefits

Features And Benefits Our ZrGeTe4 vdW crystals are synthesized using flux zone growth techniques to an unmatched 99.9999% purity. The crystals are cut on the c-axis, so they can be peeled off to the desired substrate.

Application

Application Energy storage, catalysis, analytical chemistry, mechanics, adsorption, biology, microelectronics, sensors, etc.

Specifications

Molecular Weight	674.234 g/mol
Purity	99.9999% (6N)
Density	5.83 g/cm3
Appearance	Silver to dark gray crystals
Bandgap	0.4 eV
Characterization Methods	SIMS, XRD, EDS
Crystal Structure And Type	Tetragonal phase
Dimension	~4-5mm in size
Electrical Property	2D anisotropic IR semiconductors
Production Method	flux zone growth
Storage Conditions	Room temperature and dry
Type	Synthetic
Unit Cell Parameters	a=b=0.382 nm, c=0.911 nm, α=β=90°, γ=120°

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