CAS 12138-09-9 Tungsten Disulfide(WS2) Monolayer Film

Description

Description Tungsten disulfide monolayer films show a much higher photoluminescence efficiency and narrower emission line-width than MoS2. Monolayer WS2 films have been widely used in electronic and optoelectronic devices, such as in photovoltaic, FETs, photodetectors, and valleytronic applications.

Features And Benefits

Features And Benefits Due to larger spin-orbit coupling and nearly three-fold valence band splitting, WS2 monolayer films may exhibit larger band-edge spin splitting, stronger valley Hall effect, and magnetic field effects for optoelectronic and spintronic functions .

Application

Application As measured by photoluminescence quantum yield (PLQY) and linewidth, a tungsten disulfide (WS2) monolayer film replaces MoS2 with its superior optical properties. We provide you with high quality WS2 monolayer film.

Specifications

Synonyms	Tungsten sulphide, Tungsten sulfide, Tungsten (IV) sulfide
Molecular Weight	247.97 g/mol
Purity	> 99%
Appearance	Transparent
Bandgap	1.4 - 2.01 eV
Characterization Methods	microscopic analysis, photoluminescence, and Raman spectroscopy studies
Classification	Transition metal trichalcogenides (TMTCs), 2D semiconductor materials, nano-electronics, nano-photonics, photovoltaic, materials science
Coverage	> 95%
Dimension	1 cm × 1 cm or custom-made sizes
Layers	1 layer
Packaging	1 piece/pack
Production Method	High-quality tungsten disulfide monolayer films are grown directly on the substrates (sapphire) by the chemical vapour deposition (CVD) method.
Substrate	Sapphire
Thickness	Substrate 300 µm
Transfer Method	Directly grown
Transparency	> 97%