CAS 12138-09-9 Tungsten Disulfide(WS2) Few-Layer Film

Description

Description The few-layer tungsten disulfide (WS2) thin film has a two-dimensional layered structure with a narrow indirect bandgap of 1.35 eV. In contrast, the direct band gap of the monolayer film is 2.1 eV.

Features And Benefits

Features And Benefits The WS2 few-layer thin films exhibit very high near-infrared photocatalytic activity. They also possess strong UV and visible light photocatalytic activity, making them a valuable and excellent full-solar spectrum photocatalyst.

Application

Application Due to their unique electronic structure and high specific surface area, few-layer tungsten disulfide nanosheets have potential applications as catalysts for hydrogen evolution reactions (HERs) in electrodes and energy storage devices, supercapacitors, and photoelectrochemical cells. With tunable electromagnetic absorption, it has practical application of anti-electromagnetic pollution. When NIR light is absorbed and converted into heat, WS2 is also a huge potential candidate for photothermal therapy for ablating cancer cells.

Specifications

Synonyms	Tungsten sulphide, Tungsten sulfide, Tungsten (IV) sulfide
Molecular Weight	247.97 g/mol
Purity	> 99%
Appearance	Transparent
Bandgap	1.4 - 2.01 eV
Characterization Methods	microscopic analysis, photoluminescence, and Raman spectroscopy studies
Classification	Transition metal trichalcogenides (TMTCs), 2D semiconductor materials, nano-electronics, nano-photonics, photovoltaic, materials science
Coverage	> 95%
Dimension	1 cm × 1 cm or custom-made sizes
Layers	2~5 layers
Packaging	1 piece/pack
Production Method	High-quality tungsten disulfide few-layer films were grown directly on the substrates (sapphire) via the chemical vapour deposition (CVD) method.
Substrate	Sapphire
Thickness	Substrate 300 µm
Transfer Method	Directly grown
Transparency	> 97%