TlInS2 Crystal

Description

Description This TlInS2 vdW crystal has been synthesized by floating zone technique. TlInS2 semiconductors belong to the thallium chalcogenide family, members of which have layered and chain-like structures. The atomic stacks in the TlGaSe2, TlGaS2 and TlInS2 layered crystals are arranged in the form of two twisted anion layers with weakly bonded Tl(+1) cations located in a triangular cavity between them. As a result, these crystals exhibit a layered structure with weak vdW coupling between adjacent layers.

Features And Benefits

Features And Benefits TlInS2 is a direct bandgap semiconductor with an optical bandgap of 3.5 eV, which exhibits quite novel ferroelectric, ferroelastic behavior. It is also known as a second harmonic (SHG) semiconductor due to its crystal structure.

Application

Application Energy storage, catalysis, analytical chemistry, mechanics, adsorption, biology, microelectronics, sensors, etc.

Specifications

Molecular Weight	383.33 g/mol
Purity	99.9999% (6N)
Density	4.77-5.4 g/cm³
Appearance	Bright yellow crystals
Bandgap	3.5 eV
Characteristics	ferroelectric, ferroelastic behavior
Characterization Methods	XRD, XPS, AES, SIM, and HRTEM
Crystal Structure And Type	Monoclinic
Dimension	~ 1 cm
Electrical Property	Ferroelectric, ferroelastic, SHG semiconductor, anisotropic
Production Method	Float zone technique
Storage Conditions	Room temperature and dry
Type	Synthetic
Unit Cell Parameters	a=b=1.095 nm, c=1.514 nm α=γ=90°, β=100°