TlGaTe2 Crystal

Description

Description The TlGaTe2 vdW crystal has been synthesized by floating zone technique. TlGaTe2 semiconductors belong to the thallium chalcogenide family, members of which have layered and chain-like structures. The atomic stacks in the TlGaSe2, TlGaS2 and TlInS2 layered crystals are arranged in the form of two twisted anion layers with weakly bonded Tl(+1) cations located in a triangular cavity between them.

Features And Benefits

Features And Benefits Phases of Tl-based III-V-VI2 ternary chalcogenides have been predicted to be topologically nontrivial, and a termination surface with a single Dirac cone has been determined by first-principles calculations. The TlGaTe2 crystal exhibits anisotropic structural, electronic and optical properties with a band gap of 1.2 eV.

Application

Application Energy storage, catalysis, analytical chemistry, mechanics, adsorption, biology, microelectronics, sensors, etc.

Specifications

Molecular Weight	529.31 g/mol
Purity	99.9999% (6N)
Appearance	Silver crystals
Bandgap	1.2 eV
Characteristics	Anisotropic structural, electronic and optical properties
Characterization Methods	XRD, XPS, AES, SIM, and HRTEM
Crystal Structure And Type	Monoclinic
Dimension	5-8mm
Electrical Property	Topological semiconductor, phase change
Production Method	Float zone technique
Storage Conditions	Room temperature and dry
Type	Synthetic
Unit Cell Parameters	a=b=0.8220 nm, c=0.7104 nm α=β=γ=90°