TlGaSe2 Crystal

Description

Description TlGaSe2 vdW crystals were synthesized by floating zone technique. TlGaSe2 semiconductors belong to the thallium chalcogenide family, members of which are layered and chained. The atomic stacks in the TlGaSe2, TlGaS2 and TlInS2 layered crystals are arranged in the form of two twisted anion layers with weakly bonded Tl(+1) cations located in a triangular cavity between them. As a result, these crystals exhibit a layered structure with weak vdW coupling between adjacent layers.

Features And Benefits

Features And Benefits TlGaSe2, a direct bandgap semiconductor with an optical bandgap of 1.87 eV, exhibits a unique structural phase transition from normal (N) to phase (C) states at 100K and 120K. They exhibit paraferroelectric phase transitions and also exhibit ferroelectric and ferroelastic behavior. Crystals have guaranteed structural phase transitions.

Application

Application Energy storage, catalysis, analytical chemistry, mechanics, adsorption, biology, microelectronics, sensors, etc.

Specifications

Molecular Weight	432.03 g/mol
Purity	99.9999% (6N)
Appearance	Greenish to violet crystals
Bandgap	1.87 eV
Characterization Methods	XRD, XPS, AES, SIM, and HRTEM
Crystal Structure And Type	Monoclinic
Dimension	~ 1 cm
Electrical Property	Phase change semiconductor, ferroelectric
Production Method	Float zone technique
Storage Conditions	Room temperature and dry
Type	Synthetic
Unit Cell Parameters	a=b=0.7644 nm, c=3.0832 nm α=β=γ=90°