Tin Selenide (SnSe)

Tin Selenide (SnSe)

Catalog Number: ACMA00019388

CAS Number:

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Description

Description SnSe has a layered structure (layered) with weak interlayer coupling and can be isolated into a single layer. Each monolayer is four atoms thick (Se-Sn-Sn-Se), approximately 0.9-1.0 nm.

Features And Benefits

Features And Benefits At high voltages, it undergoes a semiconductor-to-superconductor transition. By default, we ship the flux area to grow crystals for maximum performance.

Application

Application More recently, SnSe has been shown to display world record performance for thermoelectric material efficiency.

Specifications

Synonyms	Tin Selenide Powder, SnSe Powder, tin selenide; tin(II) selenide; stannous selenide;
Purity	99.9999% confirmed purity
Bandgap	0.9~1.25 eV
Characteristics	No transport agents Low defect concentration High carrier mobility
Characterization Methods	XRD, XPS, AES, SIM, and HRTEM
Crystal Structure And Type	Pnma
Degree Of Exfoliation	Easy to exfoliate
Electrical Property	Thermoelectric and anisotropic semiconductor
Production Method	Bridgman growth (6N pure) [CVT optional at 5.5N purity]
Thickness	Layer 0.9-1.0 nm
Type	Synthetic

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