Ta2NiS5 Crystal

Ta2NiS5 Crystal

Catalog Number: ACMA00022929

CAS Number:

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Description

Description Ta2NiS5 is a narrow-bandgap semiconductor with suspicious exciton-insulator behavior. Excitonic insulators are novel material systems that exhibit correlated electronic phases. When the exciton binding energy (Eb) is greater than the band gap (Eg), the excitons condense to their ground state.

Features And Benefits

Features And Benefits Exciton condensation in semiconductors occurs via the Bose-Einstein condensation process, whereas condensation in semimetals occurs via the Bardeen-Cooper-Schrieffer (BCS) process. Spontaneous band hybridization induced by Coulomb attraction between orthogonal conduction (electron) and valence (hole) bands opens the band gap and drives the system into an insulating state.

Specifications

Purity	(6N) 99.9999% confirmed
Bandgap	~0.39 eV
Characteristics	superior valleytronic performance perfect crystallization defect free structure, extremely narrow PL bandwidths clean PL spectra (free of bound exciton shoulders) high carrier mobility.
Characterization Methods	XRD, XPS, AES, SIM, and HRTEM
Crystal Structure And Type	Cmcm
Dimension	needle form
Electrical Property	Excitonic Semiconductor
Production Method	{Defaut} Flux zone growth {Optional} Chemical vapor transport
Type	Synthetic
Unit Cell Parameters	a=0.341; b=1.243; c=1.509 nm; α=89.9°; β=89.7°; γ=75.54°

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