Synthetic PbSnS2 Crystal

Description

Description Synthetic single crystal lead tin disulfide (PbSnS2) is a special member of layered transition metal dichalcogenides. The coupling between adjacent layers is weak and can be easily peeled off and separated into monolayers. In bulk, it has a bandgap of 1.45 eV. The physical properties of monolayer PbSnS2 are both theoretically and experimentally unknown.

Features And Benefits

Features And Benefits Synthetic PbSnS2 contains the fewest defects. Therefore, the synthesized PbSnS2 has sharper Raman peaks.
Natural PbSnS₂ is more brittle than synthetic PbSnS₂.
The synthetic material has the traditional properties of lightly doped semiconductors.

Application

Application Energy storage, catalysis, analytical chemistry, mechanics, adsorption, biology, microelectronics, sensors, etc.

Specifications

Synonyms	Lead Tin Disulfide
Molecular Weight	390.042 g/mol
Purity	99.9999% (6N)
Density	6.1-6.2 g/cm³
Appearance	Dark gray to black crystals
Bandgap	1.45 eV
Characteristics	High crystallinity. Ready to peel to create a monolayer.
Characterization Methods	XRD, XPS, AES, SIM, and HRTEM
Crystal Structure And Type	Orthorhombic
Degree Of Exfoliation	Easy to exfoliate
Dimension	10mmx10mm
Electrical Property	Diamagnetic semiconductor
Production Method	Bridgman (recommended) or CVT growth
Storage Conditions	Room temperature and dry
Type	Synthetic
Unit Cell Parameters	a=0.4042 nm, b=0.4349 nm, c=1.1354 nm α=β=γ=90