SiP Crystal

Description

Description SiP is a layered semiconductor crystallized in a two-dimensional anisotropic/orthorhombic phase. It has been shown to undergo an indirect (bulk) to direct (monolayer) gap transition from 1.69 (bulk) to 2.5 eV (monolayer). The SiP crystals appear to be peelable fibrous (microscale layered strips).

Features And Benefits

Features And Benefits The atomic arrangement forms a one-dimensional feature very similar to black phosphorus, black arsenic and RES2. Due to its highly anisotropic atomic arrangement, it has been shown to possess anisotropic excitons, thermal conduction, light absorption, and electron mobility.
Our SiP crystals are grown by chemical vapor transport (CVT) or flux zone growth using two different techniques.
Due to their well-established optical and electronic behavior, these crystals are considered the gold standard in the field of 2D materials.

Application

Application Energy storage, catalysis, analytical chemistry, mechanics, adsorption, biology, microelectronics, sensors, etc.

Specifications

Synonyms	Silicon Phosphide
Molecular Weight	59.06 g/mol
Purity	99.9995% purity SIMS confirmed
Density	2.08 g/cm³
Appearance	Silver to dark gray crystals
Bandgap	1.819 eV
Characterization Methods	SIMS, XRD, EDS, Raman
Crystal Structure And Type	Orthorhombic phase
Dimension	Each order contains larger than 1cm size crystals easy to exfoliate
Electrical Property	Anisotropic semiconductors
Production Method	Self-transport technique no halide contamination guarantee
Storage Conditions	Room temperature and dry
Type	Synthetic
Unit Cell Parameters	Room temperature a=0.353; b=1.04; c=1.56nm α=β=90° γ=99.7°