SbAsS3 Crystal

SbAsS3 Crystal

Catalog Number: ACMA00022928

CAS Number:

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Description

Description Sb2xAs2(1-x)S3 has a perfect 1:1:3 stoichiometric ratio and consists of Sb-Sb-S3 atoms. The crystal achieves perfect stoichiometry, large single crystal domain size, minimal defect density (1 part in 100,000 unit cells), and perfect purity level (99.9998%). In bulk form, antimony arsenic sulfide (SbAsS3) is a direct bandgap semiconductor with a bandgap of about 1.7 eV. It has a layered structure with weak interlayer coupling and can be separated into monolayers. The monolayer thickness is about 0.8 nm. Our crystals show remarkable PL properties.

Features And Benefits

Features And Benefits Our crystals are grown within 8 weeks using state-of-the-art growth techniques and display high crystallinity. Raman spectra show very clear and distinct modes with FWHM less than 6cm-1. Single crystal SbAsS3 can be used for exfoliation and is ideal for 2D studies.

Specifications

Purity	(6N) 99.9999% confirmed
Bandgap	~1.7 eV in bulk
Characteristics	PL characteristics
Characterization Methods	XRD, XPS, AES, SIM, and HRTEM
Crystal Structure And Type	P21/c
Degree Of Exfoliation	Exfoliates to monolayers
Dimension	5-8mm
Electrical Property	direct bandgap semiconductor
Production Method	Vapor transport technique - Duration: 2.0 months
Type	Synthetic

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