Rhenium Disulfide (ReS2)

Rhenium Disulfide (ReS2)

Catalog Number: ACM12038630-1

CAS Number: 12038-63-0

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Description

Description ReS2 is a direct-bandgap semiconductor of ~1.35 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Rhenium Disulfide belongs to the group-VII transition metal dichalcogenides (TMDC).

Features And Benefits

Features And Benefits The ReS2 crystals produced typically look similar to a flower with a lateral size of ~-0.8 cm, where multiple single crystals resemble the petals and the appearance is dark metallic. We produce n-type ReS2, having a typical charge carrier density of ~1017cm-3 at room temperature.

Application

Application Rhenium disulfide has peculiar physical properties: it exhibits distinct in-plane anisotropy and has a direct tunable optical band gap between 1.4 and 1.6 eV for both bulk and monolayer structures. Thus, ReS2 layered nanostructures are good candidates for optoelectronic devices, photosensitive detectors, sensors, stretchable electrodes and electrocatalysts applications. ReS2 nanosheets and nanoparticles are also used for the fabrication of field-effect transistors, energy storage devices (such as rechargeable batteries, photocatalytic and electrocatalytic hydrogen evolution reactions (HER). ReS2 can also be employed to fabricate solar cell devices.

Specifications

Synonyms	Rhenium sulphide, Bis(sulfanylidene)rhenium
Molecular Weight	250.34 g/mol
Purity	>99.995 %
Appearance	Black
Bandgap	~ 1.35 eV (direct)
Characterization Methods	XRD, Raman, EDX, Hall measurement
Classification	Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Photovoltaic, Materials science
Crystal Structure And Type	Triclinic
Dimension	~8 mm
Electrical Property	Semiconductor, n-type
Production Method	Chemical Vapour Transport (CVT)
Type	Synthetic
Unit Cell Parameters	a = 0.634, b = 0.640 nm, c = 0.645 nm, α = 106.74°, β = 119.03°, γ = 89.97°

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