ReSSe Crystal

ReSSe Crystal

Catalog Number: ACMA00022914

CAS Number:

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Description

Description Single crystal ReSxSe2(1-x) alloy crystals were developed in our approach using chemical vapor transport or flux zone techniques. Our ReSSe2 crystals display impressive structural anisotropy.

Features And Benefits

Features And Benefits The crystals are perfectly layered and can be used for exfoliation. Our R&D team also provides you with transfer technology to increase your single-layer yield up to 95%. Alloy 100% guarantees anisotropy and homogeneous alloying (no phase separation).

Specifications

Purity	99.9999% confirmed purity
Bandgap	~1.2-1.6 eV
Characteristics	anisotropic and homogeneously alloyed
Characterization Methods	XPS, SAED and EDS
Crystal Structure And Type	1T phase (anisotropic semiconductor)
Dimension	~3-4 mm
Dopant	Intrinsic semiconductor (for doping please contact us)
Electrical Property	Direct Bandgap Semiconductor
Production Method	{Defaut} Flux zone (no halide contamination) defect free {Optional CVT} Contains Br2, Cl2, TeCl4, and other halides
Type	Synthetic
Unit Cell Parameters	a=0.413; b=0.648; c=0.669 nm; α=100.7°; β=109°; γ=94.91°

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Alfa Chemistry provides cost effective, high quality and hassle free services to our clients worldwide. We guarantee on-time delivery of our results.

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Please kindly note that our products are for research use only.