PdSe2 Thin Film on SiO2/Si Substrate

PdSe2 Thin Film on SiO2/Si Substrate

Catalog Number: ACM12137767-2

CAS Number: 12137-76-7

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Description

Description Our company is currently capable of mass production of high quality PdSe2 thin films, which are produced by chemical vapor deposition (CVD) method to deposit monolayer thin films on SiO2/Si substrates. We also provide customized PdSe2 products according to customer requirements or designs. Contact us and tell us your requirements.

Features And Benefits

Features And Benefits High purity and excellent electrochemical properties

Application

Application The thin films are particularly suitable for thin film geometry measurements such as catalysis, photovoltaics, electron transport, etc.

Specifications

Purity	99.9999% (6N)
Appearance	colorless and transparent
Characterization Methods	Raman, photoluminescence, TEM, EDS
Dimension	10 * 10mm
Layers	single-layer
Packaging	Purification vacuum packaging, 1 piece / box, 5 pieces / box. 10 pieces / box.
Production Method	chemical vapor deposition (CVD)
Storage Conditions	Room temperature and dry
Substrate	SiO2/Si substrate
Thickness	Substrate 300nm oxide layer/other thickness (SiO2/Si)
Type	Synthetic

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High Quality

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Hassle-Free

Cost-Effective

Alfa Chemistry provides cost effective, high quality and hassle free services to our clients worldwide. We guarantee on-time delivery of our results.

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Please kindly note that our products are for research use only.