p-type WSe2 Crystal

p-type WSe2 Crystal

Catalog Number: ACMA00022848

CAS Number:

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Description

Description WSe2 is a semiconductor with an indirect bandgap of 1.25 eV in bulk and a direct optical bandgap of 1.62 eV in monolayer form. Its electronic bandgap lies at ~2.0 eV and the exciton binding energy is 0.4 eV. The WSe2 layers are stacked together via van der Waals (vdW) interactions, which enables them to be exfoliated into monolayers.
The p-type WSe2 crystal contains Nb doping (~1E16 cm-3 to 1E17 cm-3) to maintain p-type behavior and is considered the gold standard in the field of 2D materials.

Features And Benefits

Features And Benefits Doped WSe2 crystals are known for their excellent valley electronic properties, perfect crystallization, defect-free structure, extremely narrow PL bandwidth, clean PL spectrum (unbound exciton shoulder), and high carrier mobility. Our WSe2 crystals are grown using flux zone or chemical vapor transport techniques.

Application

Application If your application focuses solely on optics, photonics, and quantum optics, we strongly recommend flux-region grown WSe2 crystals due to their perfect crystallinity and extremely low defect concentration.
Thousands of scientific articles cite us and use these crystals for scientific accuracy and clear signals.

Specifications

Purity	(6N) 99.9999% confirmed
Bandgap	1.56 eV emission
Characteristics	superior valleytronic performance perfect crystallization defect free structure, extremely narrow PL bandwidths clean PL spectra (free of bound exciton shoulders) high carrier mobility.
Characterization Methods	XRD, XPS, AES, SIM, and HRTEM
Classification	Transition metal trichalcogenides (TMTCs), 3D Topological insulator materials, Nano-electronics, Nano-photonics, Photovoltaic, Materials science
Crystal Structure And Type	Hexagonal
Dimension	~ 3-5 cm
Dopant	p-type (Nb dopant)
Electrical Property	direct bandgap semiconductor
Production Method	{Defaut} Flux zone (no halide contamination) defect free {Optional CVT} Contains Br2, Cl2, TeCl4, and other halides
Type	Synthetic
Unit Cell Parameters	a = b = 0.331 nm, c = 1.298 nm ; α=β=90° γ=120°

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