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- p-Type Doping Crystal
- p-type Bi2Se3 Crystal
Catalog Number: ACM2068698-1
CAS Number: 2068-69-8
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Molecular Weight | 654.84 g/mol |
Melting Point | 710 °C |
Purity | (6N) 99.9999% confirmed |
Appearance | Dull grey crystal |
Bandgap | ~0.3 eV |
Characteristics | high degree of crystallinity |
Characterization Methods | XRD, XPS, AES, SIM, and HRTEM |
Classification | Transition metal trichalcogenides (TMTCs), 3D Topological insulator materials, Nano-electronics, Nano-photonics, Photovoltaic, Materials science |
Crystal Structure And Type | Rhombohedral phase |
Dimension | ~ 1 cm |
Dopant | p-type (Nb dopant) |
Electrical Property | Topological insulator, semiconductor |
Production Method | Bridgman or chemical vapor transport (CVT) techniques |
Type | Synthetic |
Unit Cell Parameters | a = b = 0.410 nm, c = 2.853 nm ; α=β=90° γ=120° |
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