p-type Bi2Se3 Crystal

p-type Bi2Se3 Crystal

Catalog Number: ACM2068698-1

CAS Number: 2068-69-8

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Description

Description p-type electron-doped bismuth selenide (Bi2Se3) crystals have been developed to optimize perfect stoichiometry and stabilize topological insulator states. Bi2Se3 crystals are topological insulator materials whose bulk is insulating and whose surface states are conducting. The surface states of topological insulators are robust to any external perturbations because these states are protected by time-reversal symmetry.

Features And Benefits

Features And Benefits Bi2Se3 is also a layered material with weak interlayer coupling. Our crystals exhibit the world's only 99.9999% purity level and defect density concentrations as low as 1E9cm-2.
Bi2Se3 shows a very clear Raman pattern with a FWHM of less than 4cm-1 and a clear XRD pattern free of minority phases.

Application

Application Our Bi2Se3 crystals are ideal for electronic topological insulators, and other solid-state scientific research. Examples include scanning tunneling (STM), transmission electron microscopy (TEM), and other spectroscopic studies.

Specifications

Molecular Weight	654.84 g/mol
Melting Point	710 °C
Purity	(6N) 99.9999% confirmed
Appearance	Dull grey crystal
Bandgap	~0.3 eV
Characteristics	high degree of crystallinity
Characterization Methods	XRD, XPS, AES, SIM, and HRTEM
Classification	Transition metal trichalcogenides (TMTCs), 3D Topological insulator materials, Nano-electronics, Nano-photonics, Photovoltaic, Materials science
Crystal Structure And Type	Rhombohedral phase
Dimension	~ 1 cm
Dopant	p-type (Nb dopant)
Electrical Property	Topological insulator, semiconductor
Production Method	Bridgman or chemical vapor transport (CVT) techniques
Type	Synthetic
Unit Cell Parameters	a = b = 0.410 nm, c = 2.853 nm ; α=β=90° γ=120°

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