Nb2SiTe4 Crystal

Nb2SiTe4 Crystal

Catalog Number: ACMA00024815

CAS Number:

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Description

Description Nb2SiTe4 is a layered narrow gap semiconductor. It crystallizes in a monoclinic phase (P121/c1) in which Nb and Si cations are sandwiched between Te anion atoms forming the individual layers. Our Nb2SiTe4 crystals are synthesized in high purity by chemical vapor transport (CVT) technology to ensure the crystals are of environmental stability and optical/electronic grade.

Features And Benefits

Features And Benefits Nb2SiTe4 crystals are all perfectly layered and prone to exfoliation, very similar to MoS2 and Bi2Te3 crystals.

Application

Application It exhibits an optical bandgap of 0.4 eV, which has important applications for mind-infrared and infrared technologies.

Specifications

Molecular Weight	724.29826 g/mol
Purity	99.9995% or higher
Density	6.15 g/cm3
Appearance	Silver to dark gray crystals
Bandgap	0.268 eV
Characteristics	environmental stability and optical/electronic grade
Characterization Methods	SIMS, XRD, EDS, Raman
Crystal Structure And Type	monoclinic phase
Dimension	couple few mm sized crystals
Electrical Property	Narrow gap semiconductor
Production Method	Chemical vapor transport
Storage Conditions	Room temperature and dry
Type	Synthetic
Unit Cell Parameters	a=0.63 nm b=0.69 nm c= 1.47 nm α=90° β=107° γ=90°

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