MoS2 FET

Description

Description Alfa Chemistry produces MoS2 FET as part of its comprehensive catalog of 2D materials. We can guide customers through material characterization and selection. Request a quote to receive pricing information based on your specifications.

Features And Benefits

Features And Benefits Device structure: conductive silicon wafer/300nm silicon oxide layer/triangular MoS2 or hand-tear single-layer MoS2/Au+Cr+Au electrode

Application

Application It is commonly used as input amplifiers in devices i.e. voltmeters, oscilloscopes, and other measuring devices, due to their high input Impedance. It is also used in radio frequency amplifiers for FM devices. It is used for mixer operation of FM and TV receiver.

Specifications

Appearance	Transparent
Characterization Methods	EDS, XRD, Raman, electrical output, transfer curve test
Composition	MoS2
Layers	Single-layer, few-layer, multi-layer, single crystal
Packaging	1 piece/pack
Production Method	Mechanical peeling/chemical vapor deposition (CVD)
Specification	Mechanical lift-off single-layer MoS2 back-gate FET (single-layer, 5um wide channel, 300nm silicon oxide substrate) Mechanical lift-off few-layer MoS2 back-gate FET (~3 layers, 5um wide channel, 300nm silicon oxide substrate) Mechanical lift-off multilayer MoS2 back-gate FET (~5 layers, 5um wide channel, 300nm silicon oxide substrate) CVD triangular MoS2 single crystal back gate FET (single layer, 5um wide channel, 300nm silicon oxide wafer)
Storage Conditions	Room temperature and dry
Substrate	Silicon oxide
Thickness	300 nm SiO²
Type	Synthetic