Monolayer 2H MoTe2 FET Device

Monolayer 2H MoTe2 FET Device

Catalog Number: ACMA00025010

CAS Number:

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Description

Description Alfa Chemistry produces monolayer 2H MoTe2 FET device as part of its comprehensive catalog of 2D materials. We can guide customers through material characterization and selection. Request a quote to receive pricing information based on your specifications.

Features And Benefits

Features And Benefits Device structure: Conductive silicon wafer/300nm silicon oxide wafer/5um gold electrode array/single layer MoTe2

Application

Application It is commonly used as input amplifiers in devices i.e. voltmeters, oscilloscopes, and other measuring devices, due to their high input Impedance. It is also used in radio frequency amplifiers for FM devices. It is used for mixer operation of FM and TV receiver.

Specifications

Appearance	Transparent
Characterization Methods	EDS, XRD, Raman, electrical output, transfer curve test
Composition	2H MoTe2
Layers	Monolayer
Packaging	1 piece/pack
Production Method	chemical vapor deposition (CVD)
Specification	Single-layer MoTe2 stripped without electrode; single-layer MoTe2 FET; Raman raw data test; IV raw data test; transfer curve raw data test
Storage Conditions	Room temperature and dry
Substrate	Silicon oxide
Thickness	300 nm SiO2
Type	Synthetic

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