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Molybdenum Diselenide(MoSe2) Monolayer Film

Molybdenum Diselenide(MoSe2) Monolayer Film

Catalog Number: ACM12058183-13

CAS Number: 12058-18-3

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Description

Description The direct band gap of monolayer MoSe2 films is about 1.5 eV, making it one of the most desirable 2D layered structures in photovoltaic single-junction solar cells and photoelectrochemical cells. The monolayer MoSe2 film is composed of two layers of Se atoms with a layer of Mo atoms (Se-Mo-Se) sandwiched in between.

Features And Benefits

Features And Benefits Molybdenum diselenide monolayer films have a direct optical bandgap of 1.48 eV and a photoluminescence peak at 840 nm, making them ideal for optoelectronic applications. In addition, MoSe2 ultrathin films have narrower bandgap, higher optical absorption, and larger spin splitting energy than MoS2, which may be superior to MoS2 for applications in tunnel field effect transistors and optoelectronic devices.

Application

Application MoSe2 monolayer films can be used for research purposes such as microscopic analysis, photoluminescence and Raman spectroscopy studies. Monolayer MoSe2 films can also be transferred to other substrates.

Specifications

Synonyms Molybdenum (IV) selenide, Molybdenum selenide
Molecular Weight 253.86 g/mol
Purity > 99%
Appearance Transparent
Bandgap 1.41 - 1.58 eV
Characterization Methods microscopic analysis, photoluminescence, and Raman spectroscopy studies
Classification Transition metal trichalcogenides (TMTCs), 2D semiconductor materials, nano-electronics, nano-photonics, photovoltaic, materials science
Coverage > 95%
Dimension 1 cm × 1 cm or custom-made sizes
Layers 1 layer
Packaging 1 piece/pack
Production Method High-quality molybdenum diselenide monolayer film was grown directly on the substrates (SiO2/Si) by the chemical vapour deposition (CVD) method.
Substrate SiO2/Si
Thickness Substrate 300 nm (oxide layer)
Transfer Method Directly grown
Transparency > 97%

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