Molybdenum Diselenide(MoSe2) Few-Layer Film

Molybdenum Diselenide(MoSe2) Few-Layer Film

Catalog Number: ACM12058183-12

CAS Number: 12058-18-3

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Description

Description Molybdenum diselenide (MoSe 2 ) few-layer films have electrical and optical properties that depend on the number of layers the film has. Few-layer MoSe 2 nanosheets have high surface area and unique electronic (quasiparticle band gap) properties due to interlayer coupling and shielding effects. Band gaps vary from 1.50 eV (monolayer) to 1.1 eV (bulk counterpart).

Features And Benefits

Features And Benefits Molybdenum diselenide few-layer films have shown great potential in energy processing and storage devices such as lithium and sodium-ion batteries due to their large interlayer spacing (0.64 nm) and high electrical conductivity. It is also widely used in lasers, capacitors, photodetectors, and photoelectrochemical cells as a catalyst for the hydrogen evolution reaction (HER).

Application

Application MoSe2 few-layer thin films can be used for research purposes such as microscopic analysis, photoluminescence and Raman spectroscopy studies. These films can also be transferred to other substrates.

Specifications

Synonyms	Molybdenum (IV) selenide, Molybdenum selenide
Molecular Weight	253.86 g/mol
Purity	> 99%
Appearance	Transparent
Bandgap	1.41 - 1.58 eV
Characterization Methods	microscopic analysis, photoluminescence, and Raman spectroscopy studies
Classification	Transition metal trichalcogenides (TMTCs), 2D semiconductor materials, nano-electronics, nano-photonics, photovoltaic, materials science
Coverage	> 95%
Dimension	1 cm × 1 cm or custom-made sizes
Layers	2~5 layers
Packaging	1 piece/pack
Production Method	High-quality molybdenum diselenide few-layer films are directly grown on substrates (SiO2/Si) via the chemical vapour deposition (CVD) method.
Substrate	SiO2/Si
Thickness	Substrate 300 nm (oxide layer)
Transfer Method	Directly grown
Transparency	> 97%

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