Mechanically Exfoliated WS2 FET Device

Mechanically Exfoliated WS2 FET Device

Catalog Number: ACMA00025009

CAS Number:

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Description

Description Alfa Chemistry produces mechanically exfoliated WS2 FET devices as part of its comprehensive catalog of 2D materials. We can guide customers through material characterization and selection. Request a quote to receive pricing information based on your specifications.

Features And Benefits

Features And Benefits Device structure: Gold electrode/WS2/300nmSiO2/Si; back gate FET

Application

Application It is commonly used as input amplifiers in devices i.e. voltmeters, oscilloscopes, and other measuring devices, due to their high input Impedance. It is also used in radio frequency amplifiers for FM devices. It is used for mixer operation of FM and TV receiver.

Specifications

Appearance	Transparent
Characterization Methods	EDS, XRD, Raman, electrical output, transfer curve test
Composition	WS2
Layers	few layers (~3 layers, ~5 layers), multiple layers (~10 layers)
Packaging	1 piece/pack
Production Method	Mechanical peeling
Specification	Single-layer WS2 FET; few-layer WS2 FET; multilayer WS2 FET; Raman; PL; transfer curve; output curve; AFM
Storage Conditions	Room temperature and dry
Substrate	Silicon oxide
Thickness	300 nm SiO2
Type	Synthetic

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