Name: Mechanically Exfoliated Black Phosphorus FET Device
SKU: ACMA00025005
Rating: 5 (1 reviews)

Description

Description Alfa Chemistry produces mechanically exfoliated black phosphorus FET devices as part of its comprehensive catalog of 2D materials. We can guide customers through material characterization and selection. Request a quote to receive pricing information based on your specifications.

Features And Benefits

Features And Benefits Device structure: highly doped conductive silicon wafer/300nm oxide layer silicon wafer/gold electrode/mechanically stripped few layers of black phosphorus; channel width 5um

Application

Application It is commonly used as input amplifiers in devices i.e. voltmeters, oscilloscopes, and other measuring devices, due to their high input Impedance. It is also used in radio frequency amplifiers for FM devices. It is used for mixer operation of FM and TV receiver.

Specifications

Appearance	Transparent
Characterization Methods	EDS, XRD, Raman, electrical output, transfer curve test
Composition	black phosphorus
Layers	few layers (~3 layers, ~5 layers)
Packaging	1 piece/pack
Production Method	Mechanical peeling
Specification	Black phosphorus FET+Au electrode; IV test data; Transfer characteristic test data; Raman test data
Storage Conditions	Room temperature and dry
Substrate	Silicon oxide
Thickness	300 nm SiO²
Type	Synthetic