Indium Telluride (InTe)

Indium Telluride (InTe)

Catalog Number: ACMA00019003

CAS Number:

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Description

Description The product is a layered InTe crystal. In bulk InTe, indium telluride has a band gap of about 0.6 eV and exhibits strong photoluminescence. It has a layered structure with weak interlayer coupling and can be separated into monolayers.

Features And Benefits

Features And Benefits InTe crystals exhibit a TlSe-like structural transition and thus have 2D anisotropic responses very similar to ReS2, WTe2 and TiS3. Each monolayer is four atoms thick (Te-In-In-Te), approximately 0.9-1.0 nm. We have separated InTe into monolayers. The Raman peaks are sharp and strong, indicating high crystallinity.

Application

Application InTe has a layered structure with weak interlayer coupling. Single crystal InTe can be used for exfoliation and is ideal for 2D studies.

Specifications

Synonyms	Indium Telluride Powder, InTe Powder, indium telluride; indium (I,III) telluride;
Purity	Better than 99.9999% (6N)
Bandgap	0.6 eV
Characterization Methods	XRD, XPS, AES, SIM, and HRTEM
Crystal Structure And Type	Monoclinic
Dimension	4 mm
Electrical Property	2D anisotropic semiconductor
Production Method	Float zone technique
Thickness	Layer 0.9-1.0 nm
Type	Synthetic

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