Indium (II) Selenide (InSe) Crystal

Indium (II) Selenide (InSe) Crystal

Catalog Number: ACM1312421-2

CAS Number: 1312-42-1

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Description

Description Indium(II) selenide (InSe) belongs to the IIIA-VIA group of two-dimensional layered semiconductors. Each of its layers has a honeycomb lattice of indium and selenium atoms. Has more stable properties under ambient conditions. The weak van der Waals forces between the InSe layers facilitate mechanical and liquid exfoliation, enabling scaling of native films to true nanoscale dimensions.

Features And Benefits

Features And Benefits IIIA−VIA family group of 2D layered semiconductors
Ultra-thin indium selenide (InSe) offers a useful middle ground between silicon and graphene
Electron mobility up to 2,000 cm2 V-1 s-1
With a direct band gap of ~ 1.3 eV, InSe is comparable to silicon with ultra-fast electron response

Application

Application Suitable for use a semiconductor, photoconductor, and in non-linear optics

Specifications

Synonyms	Indium monoselenide
Molecular Weight	193.78 g/mol
Melting Point	600 °C (lit.)
Purity	≥ 99.999%
Appearance	Dark brown
Bandgap	1.3 - 2.0 eV
Characterization Methods	XRD, Raman, EDX
Classification	Transition metal dichalcogenides (TMMCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Photovoltaic, Materials science
Crystal Structure And Type	Rhombohedral
Dimension	≥10mm
Electrical Property	2D semiconductor
Production Method	Chemical Vapour Transport (CVT)
Type	Synthetic

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