In2S3 Crystal

In2S3 Crystal

Catalog Number: ACMA00022926

CAS Number:

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Description

Description The gamma layered phase of In2S3 is a direct bandgap semiconductor with an optical bandgap ranging from 2 eV to 3.25 eV. It is a fundamental bandgap property (direct and indirect), the value of which has been widely discussed in the field and remains open.

Features And Benefits

Features And Benefits Typical crystal sizes range from a few millimeters. The crystals appear to be layered, but are more difficult to exfoliate than molybdenum disulfide. Therefore, we recommend the use of high-viscosity tape, ultrasonic peeling, or other methods to produce atomic-scale flakes.

Application

Application In2S3 is a particularly attractive semiconductor for photoelectrochemical, solar cell and photonic applications.

Specifications

Purity	99.9999% purity
Bandgap	1.41 eV
Characterization Methods	XPS, SAED and EDS
Degree Of Exfoliation	difficult to exfoliate
Dimension	a few mm
Electrical Property	direct bandgap semiconductor
Production Method	high-viscosity tape, ultrasonic peeling, or other methods
Type	Synthetic

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