Name: Hexagonal Boron Nitride (h-BN)
SKU: ACM10043115-18
Rating: 5 (1 reviews)

Description

Description Hexagonal boron nitride is a semiconductor with a direct band gap of about 5.9 eV. These layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers, up to monolayers of h-BN.

Features And Benefits

Features And Benefits Our h-BN crystals have typical lateral dimensions of about 0.1 cm and are transparent. Single crystal h-BN is an excellent insulator with very large breakdown voltage (>0.4 V/nm). Large-area-sized h-BN single crystals can be exfoliated onto substrates. For crystals with thicknesses of tens of nanometers thick, the size ranges up to ~100 μm.

Application

Application h-BN has been widely used as an insulator for the production of ultra-high mobility 2D heterostructures composed of various types of 2D semiconductors.

Specifications

Synonyms	White graphene, hexagonal BN, h-BN
Molecular Weight	24.82 g/mol
Melting Point	2.973 °C (sublimates)
Purity	Grade A
Appearance	Colourless
Bandgap	Indirect bandgap at 5.955 eV
Characterization Methods	XRD, Raman, EDX
Classification	2D materials, Organic electronics, Materials science
Crystal Structure And Type	Hexagonal
Dimension	~1 mm
Electrical Property	Insulator/Semiconductor
Production Method	CVT method
Type	Synthetic
Unit Cell Parameters	a = b = 0.2502 nm, c = 0.6617 nm, α = β = 90°, γ = 120°