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Hexagonal Boron Nitride (h-BN)

Hexagonal Boron Nitride (h-BN)

Catalog Number: ACM10043115-18

CAS Number: 10043-11-5

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Description

Description Hexagonal boron nitride is a semiconductor with a direct band gap of about 5.9 eV. These layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers, up to monolayers of h-BN.

Features And Benefits

Features And Benefits Our h-BN crystals have typical lateral dimensions of about 0.1 cm and are transparent. Single crystal h-BN is an excellent insulator with very large breakdown voltage (>0.4 V/nm). Large-area-sized h-BN single crystals can be exfoliated onto substrates. For crystals with thicknesses of tens of nanometers thick, the size ranges up to ~100 μm.

Application

Application h-BN has been widely used as an insulator for the production of ultra-high mobility 2D heterostructures composed of various types of 2D semiconductors.

Specifications

Synonyms White graphene, hexagonal BN, h-BN
Molecular Weight 24.82 g/mol
Melting Point 2.973 °C (sublimates)
Purity Grade A
Appearance Colourless
Bandgap Indirect bandgap at 5.955 eV
Characterization Methods XRD, Raman, EDX
Classification 2D materials, Organic electronics, Materials science
Crystal Structure And Type Hexagonal
Dimension ~1 mm
Electrical Property Insulator/Semiconductor
Production Method CVT method
Type Synthetic
Unit Cell Parameters a = b = 0.2502 nm, c = 0.6617 nm, α = β = 90°, γ = 120°

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