Name: Hexagonal Boron Nitride (h-BN, BN2A1)
SKU: ACM10043115-19
Rating: 5 (1 reviews)

Description

Description Hexagonal boron nitride, a semiconductor with a direct bandgap of about 5.9 eV, has been widely used as an insulator for the production of ultra-high mobility 2D heterostructures composed of various types of 2D semiconductors. These layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers, up to monolayers of h-BN.

Features And Benefits

Features And Benefits Our h-BN crystals have typical lateral dimensions of about 0.1 cm and are transparent. Single crystal h-BN is an excellent insulator with very large breakdown voltage (>0.4 V/nm). Large-area-sized h-BN single crystals can be exfoliated onto substrates (e.g., SiO, quartz, polymers, etc.). For crystals with thicknesses of tens of nanometers thick, the size ranges up to ~100 μm.

Application

Application New 2D semiconductors, topological insulators, and superconductors have numerous applications in advanced technologies, and Alfa Chemistry engineers can guide customers in material characterization and selection.

Specifications

Purity	Grade A
Characterization Methods	XRD, Raman, EDX
Crystal Structure And Type	Hexagonal
Dimension	~1 mm
Electrical Property	Insulator/Semiconductor
Type	Synthetic
Unit Cell Parameters	a = b = 0.2502 nm, c = 0.6617 nm, α = β = 90°, γ = 120°